Residual Stress of Curvature Sapphire Substrate with GaN Film Released by the Application of Trench Structures. International Journal of Automation and Smart Technology, [S. l.], v. 3, n. 4, p. 239–243, 2013. DOI: 10.5875/ausmt.v3i4.202. Disponível em: https://mail.jausmt.org/index.php/jausmt/article/view/314.. Acesso em: 6 jun. 2026.